Asteran Inc. Russian manufacturer hexachlorodisilane (HCDS) since
Worldwide distributor of bulk HCDS (minimum order is 100
HCDS Manufacturing, Applications and Use:
HCDS is used as a precursor for semiconductor and solar industrial manufacturing. This product is also a critical precursor for next generation semiconductor memory device manufacturing. The commercial development of products for semiconductor, flat screens, fiber optics and solar energy can all benefit from the high volume manufacturing (HVM) processing of HCDS.
Silicon microelectronic processing describes the design and development of very small electronic devices that use little power. These devices are also known as integrated circuits. Silicon microelectronics technology use the unique properties of silicon to develop microelectronic processors for solar, organic and semiconductor reactions.
Silicon microelectronic processing uses dielectric materials such as Silicon nitride, HCDS and Silicon dioxide to develop products. These dielectric materials are then used to manufacture thin films of Si, SiO2, SiN, SiON and SiC. Conventionally these Si thin films are grown via deposition of Si through chemical vapor deposition (CVD) or atomic layer deposition (ALD) processes.
Low Purity Production (95%-98%)
The typical chemical synthesis of HCDS involves the chlorinating of silicon alloys. These products contain low levels of metallic contamination, such as titanium and aluminum.
The production of low purity HCDS is used as a precursor to substituted disilanes and is a byproduct of the production reaction of trichlorosilane (TCS).
Low purity HCDS is also used as a precursor for silicon-based coatings.
High Purity Production (Greater than 99%)
The production of highly purified HCDS is achieved upon repetitive purification processing of titanium-catalyzed semiconductor grade silane.
The highest purity HCDS is necessary for solar cells and semiconductor integrated circuits.
Various methods for the production of HCDS have been approved as patent processes for the delivery of high purity HCDS. The purity of HCDS is critical to its use as a semiconductor and in electronic products.
Conventional production of HCDS involves the chlorination of an alloy powder containing silicon. The chlorination process produces a mixture of gases of poly-chlorosilane. When recovered the gas mixture can contain hexachlorodisilane, tetrachlorodisilane, trichlorosilane and unreacted chlorosilane. This heterogeneous mixture of gases is then cooled, condensed, and distilled to recover hexachlorodisilane and tetrachlorodisilane. When in the presence of water, the HCDS will rapidly decompose, depositing a silicone polymer and give off hydrochloric acid.
In order to obtain high purity HCDS it is important to remove unreacted chlorosilane and by-product silicon tetrachloride by further distilling the resultant condensate.
Other processes use ferrosilicon to react with chlorine gas in a reaction tube via simple stirring and mixing.
These processes use of low-grade metallic silicon usually lead to unavoidable contamination of products that make isolation of the desired HCDS difficult. It is particularly difficult to isolate high purity HCDS when titanium or aluminum impurities are present, due to the similar boiling points.
Alternative Approaches to the Conventional Methods
Recent patent processing for the production of HCDS utilizes the condensing of exhaust gas from a reactor of chlorosilane and hydrogen, producing polycrystalline silicone. Distillation of this condensate separates the unreacted chlorosilane and tetrachlorosilane. Further distillation recovers more purified hexachlorodisilane and tetrachlorosilane, than traditional metallic silicon isolation of HCDS.
Chemical Vapor Deposition (CVD)
Chemical vapor deposition (CVD) is a chemical process that occurs at relatively low temperatures, in which high-purity, high-performance solid materials are produced. Typically this process involves a wafer substrate that is repeatedly exposed to one or more volatile precursors, such as HCDS, which react on the surface to produce a silicone deposit (film).
Atomic Layer Deposition (ALD)
Atomic layer deposition (ALD) is a self-limiting chemical process that deposits a thin film of the desired product on a surface following exposure of two chemical precursors to a growth surface. This process is very similar to CVD except the reaction is broken down into half-reactions and the precursors are kept separate during the reaction. This process allows manufacturers to accurately control the film thickness but is a very time consuming process.
Read more about HCDS manufacturing specs, prices, and ordeing information at Asteran Inc
Please note that minimum order of HCDS from Asteran is 100 kg.
For pricing quote please contact us at firstname.lastname@example.org
Contact: Asteran Inc, 1200 Dzerzhinsk Ave, Moscow, Russia, email@example.com, Web: www.asteran.org